Philips Semiconductors
Full bridge driver IC
THERMAL CHARACTERISTICS
Product speci?cation
UBA2032
SYMBOL
R th(j-a)
PARAMETER
thermal resistance from junction to ambient
UBA2032T
UBA2032TS
CONDITIONS
in free air
VALUE
80
100
UNIT
K/W
K/W
QUALITY SPECIFICATION
In accordance with “General Quality Specification for Integrated Circuits: SNW-FQ-611”.
CHARACTERISTICS
T j = 25 ° C; all voltages are measured with respect to SGND; positive currents ?ow into the IC; unless otherwise
speci?ed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
High voltage
I HV
I FSL , I FSR
high voltage supply current
high voltage ?oating supply
t < 0.5 s and V HV = 550 V
t < 0.5 s and V FSL = V FSR = 564 V
0
0
?
?
30
30
μ A
μ A
current
I EXTDR
I +LVS
I ? LVS
supply current on pin EXTDR
supply current on pin +LVS
supply current on pin ? LVS
t < 0.5 s and V EXTDR = 464 V
t < 0.5 s and V +LVS = 464 V
t < 0.5 s and V ? LVS = 450 V
0
0
0
?
?
?
30
30
30
μ A
μ A
μ A
Start-up; powered via pin HV
I i(HV)
V HV(rel)
HV input current
level of release power drive
V HV = 11 V; note 1
?
11
0.5
12.5
1.0
14
mA
V
voltage
V HV(UVLO)
V HV(hys)
reset level of power drive voltage
HV hysteresis voltage
8.5
2.0
10
2.5
11.5
3.0
V
V
V DD
internal supply voltage
V HV = 20 V
10.5
11.5
13.5
V
Start-up; powered via pin V DD
I i(DD)
V DD(rel)
V DD input current
level of release power drive
V DD = 8.25 V; note 2
?
8.25
0.5
9.0
1.0
9.75
mA
V
voltage
V DD(UVLO)
V DD(hys)
reset level of power drive voltage
hysteresis voltage
5.75
2.0
6.5
2.5
7.25
3.0
V
V
2005 Mar 24
9
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